Power Transistors
1
Publication date: January 2003 SJD00285BED
2SA2064
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
■ Features
• High speed switching (t
stg
: storage time/t
f
: fall time is short)
• Low collector-emitter saturation voltage V
CE(sat)
• Superior forward current transfer ratio h
FE
linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
−50 V
Collector-emitter voltage (Base open) V
CEO
−50 V
Emitter-base voltage (Collector open) V
EBO
−6V
Collector current I
C
−10 A
Peak collector current I
CP
−20 A
Collector power dissipation P
C
25 W
T
a
= 25°C 2.0
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
CEO
I
C
= −10 mA, I
B
= 0 −50 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −50 V, I
E
= 0 −100 µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= −50 V, I
B
= 0 −100 µA
Forward current transfer ratio h
FE1
V
CE
= −2 V, I
C
= −1 A 200 
h
FE2
V
CE
= −2 V, I
C
= −7 A 100
Collector-emitter saturation voltage V
CE(sat)
I
C
= −5 A, I
B
= − 250 mA − 0.5 V
Turn-on time t
on
I
C
= −4 A, Resistance loaded 0.5 µs
Storage time t
stg
I
B1
=

− 0.4 A, I
B2
= 0.4 A 1.0 µs
Fall time t
f
V
CC
= −40 V 0.15 µs
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder Dip
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
B
C
E