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ASIMRF890

器件描述:NPN SILICON RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:18.24KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA 30 V
BV
CES
I
C
= 5.0 mA 55 V
BV
EBO
I
E
= 5.0 mA 4.0 V
I
CBO
V
CB
= 30 V 500 µA
h
FE
V
CE
= 5.0 V I
C
= 100 mA 10 100 ---
C
OB
V
CB
= 30 V f = 1.0 MHz 2.0 pF
P
G

η
C

V
CC
= 24 V P
OUT
= 2.0 V f = 900 MHz
9.0
55

dB
%

NPN SILICON RF POWER TRANSISTOR
MRF890
DESCRIPTION:
The ASI MRF890 is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.

FEATURES:
• Pg = 9.0 dB min. @ 900 MHz
• P
1dB
= 2.0 Watts min. at 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
0.5 A
V
CBO
55 V
V
CER
30 V
V
EBO
4.0 V
P
DISS
7.0 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
25
°
C/W
PACKAGE STYLE .205 4L STUD



E E
B
C