TECHNICAL DATA

NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL
TRANSISTOR
Qualified per MIL-PRF-19500/421
Devices Qualified Level
2N3838
2N4854
2N4854U




JAN
JANTX
JANTXV


MAXIMUM RATINGS
Ratings Sym 2N3838
(2)
2N4854, U Unit
Collector-Emitter Voltage
V
CEO

40 40 Vdc
Collector-Base Voltage
V
CBO

60 60 Vdc
Emitter-Base Voltage
V
EBO

5.0 5.0 Vdc
Collector Current
I
C

600 600 mAdc


One
Trans
Total
Devic
e
One
Trans
Total
Device

Total Power Dissipation @ T
A
= +25
0
C

@ T
C
= + 25
0
C
(1)
P
T

0.25
(2)
0.7
(4)
0.35
1.4
0.30
(3)
1.0
(5)
0.60
2.0
W
W
Operating & Storage Junction Temp. Range
T
J

200
0
C
Operating & Storage Junction Temp. Range
T
stg

-55 to +200
0
C
Lead to Case Voltage
±120
Vdc
1) T
C
rating do not apply to Surface Mount devices (2N4854U)
2) For T
A
> +25
0
C Derate linearly 1.43 mW/
0
C (one transistor) 2.00 mW/
0
C (both transistors)
3) For T
A
> +25
0
C Derate linearly 1.71 mW/
0
C (one transistor) 3.43 mW/
0
C (both transistors)
4) For T
C
> +25
0
C Derate linearly 4.0 mW/
0
C (one transistor) 8.0 mW/
0
C (both transistors)
5) For T
C
> +25
0
C Derate linearly 5.71 mW/
0
C (one transistor) 11.43 mW/
0
C (both transistors)


TO-78*
2N4854


6 Pin Surface Mount*
2N4854U


6 Lead Flatpack*
2N3838

*See MILPRF19500/421
for package dimensions.
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
V
(BR)CEO
40

Dc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
I
CBO(1)
10 µAdc
Collector-Base Cutoff Current
V
CB
= 50 Vdc 2N3838
2N4854, U
I
CBO(2)
50
10

ηAdc

Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 3.0 Vdc
I
EBO

10
10
µAdc
ηAdc


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42103
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