© 1994
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
FEATURES
• Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5186 50 units/box Embossed tape, 8 mm wide,
2SC5186-T1 3 000 units/reel
Pin 3 (Collector) facing the perforations.
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5
0.5
0.2
+0.1 –0
0.3
+0.1 –0
2
1
3
0.75 ± 0.05
0.6
0.15
+0.1 –0.05
0 to 0.1
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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