© 1994
DATA SHEET
SILICON TRANSISTOR
2SC5183
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD
PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
• Low Noise
• NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
• NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 4-pin Mini-Mold package
EIAJ: SC-61
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
2SC5183-T1 Embossed tape, 8 mm wide,
Pin No. 3 (base) and No. 4 (emitter)
facing the perforations
2SC5183-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12107EJ2V0DS00 (2nd edition)
(Previous No. TC-2480)
Date Published November 1996 N
Printed in Japan
2.9 ± 0.2
2
1
3
4
(1.8)
0.95
0.85
0.6
+0.1 –0.05
0.4
+0.1 –0.05
(1.9)
0.8
0.16
+0.1 –0.06
0~0.1
0.4
+0.1 –0.05
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1 –0.05
5˚ 5˚
5˚ 5˚
1.1
+0.2 –0.1
T86
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
PACKAGE DIMENSIONS
(Units: mm)