TECHNICAL DATA

PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices Qualified Level
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS
Ratings Symbol 2N3634* 2N3635* 2N3636* 2N3637* Unit
Collector - Emitter Voltage V CEO 140 175 Vdc
Collector - Base Voltage V CBO 140 175 Vdc
Emitter - Base Voltage V EBO 5.0 Vdc
Collector Current I C 1.0 Adc
Total Power Dissipation @ T A = +25 0 C (1)
@ T C = +25 0 C (2) P T
1.0
5.0
W
W
Operating & S torage Junction Temperature Range T J , T stg - 65 to +200 0 C
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/ 0 C for T A > +25 0 C
2) Derate linearly 28.6 mW/ 0 C for T C > +25 0 C

TO - 39* (TO - 205AD)
2N3634, 2N3635
2N3636, 2N3637

TO - 5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Current
I C = 10 mAdc 2N3634, 2N3635
2N3636, 2N3637
V (BR) CEO

140
175

Vdc
Collector - Base Cutoff Current
V CB = 100 Vdc
V CB = 140 Vdc 2N3634, 2N3635
I CBO

100
10
ηAdc
µAdc
Emitter - Base Cutoff Current
V EB = 3.0 Vdc
V E B = 5.0 Vdc
I EBO

50
10
ηAdc
µAdc
Collector - Emitter Cutoff Current
V CE = 100 Vdc I CEO 10 µAdc



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