TECHNICAL DATA

NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices Qualified Level
2N1487 2N1488 2N1489 2N1490








MAXIMUM RATINGS
Ratings Symbol 2N1487
2N1498
2N1488
2N1490
Unit
Collector - Emitter Voltag e
V
CEO

40 55 Vdc
Collector - Base Voltage
V
CBO

60 100 Vdc
Collector - Emitter Voltage
V
CEX

60 100 Vdc
Emitter - Base Voltage
V
EBO

10 Vdc
Base Current I
B
3.0 Adc
Collector Current
I
C

6.0 Adc
Total Power Dissipation @ T
C
= 25
0
C
(1)

P
T

75 W
Operating & Storage Junction Temperature Range
T
J ,
T
stg

- 65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction - to - Case
R
θJC

2.33
0
C/W
1) Derate linearly @ 0.429 W/
0
C for T
C
> 25
0
C





TO - 33*
(TO - 204AA)


*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I
C
= 100 mAdc 2N1487, 2N1489
2N1488, 2N1490

V
(BR) CEO


40
55

Vdc
Collector - Emitter Breakdown Voltage
I
C
= 200 µAdc 2N1487, 2N1489
2N1488, 2N1490

V
(BR) CBO


60
100

Vdc
Collector - Emitter Breakdown Voltage
I
C
= 0.5 mAdc, V
EB
= 1.5 Vdc 2N1487, 2N1489
2N1488, 2N1490

V
(BR) CEX


60
100

Vdc
Collector - Base Cutoff Current
V
CB
= 30 Vdc
I
CBO
25 µAdc
Emitter - Base Cutoff Current
V
EB
= 10 Vdc
I
EBO
25 µAdc

6 Lake Street, Lawrence, MA 01841
1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803
120101
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