1SV325
2003-03-24 1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV325

TCXO/VCO


Gb7G20 High capacitance ratio: C
1 V
/C
4 V
= 4.3 (typ.)
Gb7G20 Low series resistance: r
s
= 0.4 Ω (typ.)
Gb7G20 Useful for small size tuner.

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Reverse voltage V
R
10 V
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C










Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage V
R
I
R
G3d 1 G6dA 10 Gbe Gbe V
Reverse current I
R
V
R
G3d 10 V Gbe Gbe 3 nA
Capacitance C
1 V
V
R
G3d 1 V, f G3d 1 MHz 44 Gbe 49.5 pF
Capacitance
4 V
V
R
G3d 4 V, f G3d 1 MHz 9.2 Gbe 12 pF
Capacitance ratio C
1 V
/C
4 V
Gbe 4 4.3 Gbe Gbe
Series resistance r
s
V
R
G3d 4 V, f G3d 100 MHz Gbe 0.4 0.8 G57
Note: Signal level when capacitance is measured: Vsig G3d 500 mVfms

Marking



Unit: mm


JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 0.0014 g (typ.)