BUK9Y19-55B
器件描述：N-channel TrenchMOS⑩ logic level FET
器件厂商：PHILIPS [Philips Semiconductors]
文件大小：102.89KB，共12页
Sponsor by e络盟器件资料摘要：
BUK9Y19-55B
N-channel TrenchMOS™ logic level FET
Rev. 01 — 28 May 2004 Product dataM3D748
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
a73 Very low on-state resistance a73 Q101 compliant
a73 175 °C rated a73 Logic level compatible.
a73 Automotive systems a73 12 V and 24 V loads
a73 Motors, lamps and solenoids a73 General purpose power switching.
a73 E
DS(AL)S
≤ 91 mJ a73 R
DSon
= 16.3 mΩ (typ)
a73 I
D
≤ 40 A a73 P
tot
≤ 75 W.
Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
SOT669 (LFPAK)
4 gate (g)
mb mounting base,
connected to
drain (d)
1
Top view MBL286
23
mb
4
s1 s2 s3
d
g
MBL798
N-channel TrenchMOS™ logic level FET
Rev. 01 — 28 May 2004 Product dataM3D748
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
a73 Very low on-state resistance a73 Q101 compliant
a73 175 °C rated a73 Logic level compatible.
a73 Automotive systems a73 12 V and 24 V loads
a73 Motors, lamps and solenoids a73 General purpose power switching.
a73 E
DS(AL)S
≤ 91 mJ a73 R
DSon
= 16.3 mΩ (typ)
a73 I
D
≤ 40 A a73 P
tot
≤ 75 W.
Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol
Pin Description Simplified outline Symbol
1,2,3 source (s)
SOT669 (LFPAK)
4 gate (g)
mb mounting base,
connected to
drain (d)
1
Top view MBL286
23
mb
4
s1 s2 s3
d
g
MBL798