BUF420
BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPES
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n VERY HIGH SWITCHING SPEED
n MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
n LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
n SWITCH MODE POWER SUPPLIES
n MOTOR CONTROL
DESCRIPTION
The BUF420 and BUF420M are manufactured
using High Voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage capacity. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a wide
RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -1.5 V) 850 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 450 V
V
EBO
Emitter-Base Voltage (I
C
=0) 7 V
IC Collector Current 30 A
ICM Collector Peak Current (tp <5ms) 60 A
I
B
Base Current 6 A
IBM Base Peak Current (tp <5ms) 9 A
TO-218 TO-3
Ptot Total Dissipation at Tc =25
o
C 200 200 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max Operation Junction Temperature 150
o
C
1
2
3
TO-218 TO-3
(version ”R”)
1
2
For TO-3 :
C = Tab
E = Pin2.
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