BSS8402DW
器件描述：COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
器件厂商：DIODES [Diodes Incorporated]
文件大小：138.16KB，共5页
Sponsor by e络盟器件资料摘要：
DS30380 Rev. 4 - 2 1 of 5 BSS8402DW
www.diodes.com c227 Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Features
c183 Low On-Resistance: R
DS(ON)
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
c183 Complementary Pair
c183 Also Available in Lead Free Version
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage R
GS
c163 1.0Mc87 VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
c183 Case: SOT-363, Molded Plastic
c183 Case material - UL Flammability Rating
Classification 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 5
c183 Terminal Connections: See Diagram
c183 Marking: KNP (See Page 5)
c183 Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
LD
B C
H
K
G
F
D
2
S
2
G
2
D
1
G
1
S
1
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J c190 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
c97 0c176 8°
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section @ TA = 25c176C unless otherwise specified
Maximum Ratings - Total Device
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient Rc113JA 625 °C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage R
GS
c163 20Kc87 VDGR -50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 1) Continuous ID -130 mA
T
C
U
D
O
R
P
W
E
N
www.diodes.com c227 Diodes Incorporated
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD
EFFECT TRANSISTOR
Features
c183 Low On-Resistance: R
DS(ON)
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
c183 Complementary Pair
c183 Also Available in Lead Free Version
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage R
GS
c163 1.0Mc87 VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
c183 Case: SOT-363, Molded Plastic
c183 Case material - UL Flammability Rating
Classification 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 4, on Page 5
c183 Terminal Connections: See Diagram
c183 Marking: KNP (See Page 5)
c183 Weight: 0.008 grams (approx.)
Mechanical Data
A
M
J
LD
B C
H
K
G
F
D
2
S
2
G
2
D
1
G
1
S
1
S
2
D
2
Q
1
Q
2
D
1
S
1
G
2
G
1
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J c190 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
c97 0c176 8°
All Dimensions in mm
TOP VIEW
Maximum Ratings N-CHANNEL - Q
1
, 2N7002 Section @ TA = 25c176C unless otherwise specified
Maximum Ratings - Total Device
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation (Note 1) Pd 200 mW
Thermal Resistance, Junction to Ambient Rc113JA 625 °C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Maximum Ratings P-CHANNEL - Q
2
, BSS84 Section
@ T
A
= 25c176C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage R
GS
c163 20Kc87 VDGR -50 V
Gate-Source Voltage Continuous VGSS c17720 V
Drain Current (Note 1) Continuous ID -130 mA
T
C
U
D
O
R
P
W
E
N