Revision 1.1
Jan. 2004
1
R0201-BS616LV2016
Very Low Power/Voltage CMOS SRAM
128K X 16 bit
• Wide Vcc operation voltage : 2.4V ~ 5.5V
• Very low power consumption :
Vcc = 3.0V C-grade: 29mA (@55ns) operating current
I -grade: 30mA (@55ns) operating current
C-grade: 24mA (@70ns) operating current
I -grade: 25mA (@70ns) operating current
0.3uA(Typ.) CMOS standby current
Vcc = 5.0V C-grade: 60mA (@55ns) operating current
I -grade: 62mA (@55ns) operating current
C-grade: 53mA (@70ns) operating current
I -grade: 55mA (@70ns) operating current
1.0uA(Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
The BS616LV2016 is a high performance , very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits and
operates from a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.3uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by active LOW chip enable (CE),
active LOW output enable(OE) and three-state output drivers.
The BS616LV2016 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2016 is available in DICE form , JEDEC standard 44-pin
TSOP Type II package and 48-ball BGA package.
„ DESCRIPTION
„ FEATURES
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS616LV2016
SPEED
( ns )
STANDBY
( ICCSB1, Max )
Operating
( ICC, Max )
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3.0V
Vcc=3.0V
PKG TYPE
BS616LV2016DC DICE
BS616LV2016EC TSOP2-44
BS616LV2016AC
+0
O
C to +70
O
C 2.4V ~5.5V 55/70 3.0uA 53mA
BGA-48-0608
BS616LV2016DI DICE
BS616LV2016EI TSOP2-44
BS616LV2016AI
-40
O
C to +85
O
C 2.4V ~ 5.5V 55/70 5.0uA 25mA
BGA-48-0608
BSI
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A3 A2 A1
Data
Buffer
Input
Control
Gnd
Vcc
OE
WE
CE
DQ15
DQ0
A16
A5
A6
A7
A15
A13
16
16
16
16
14
128
2048
102420
A14
A12
A9
A4
A0A11
A8
Address
Input
Buffer
A10
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
G
H
F
E
D
C
B
A
123456
D15
D14
VSS
D9
D8
LB
VCC
N.C. A8 A9
D13
A12
A14
D12
D11
D10 A5
UB
OE
A3
A0
A11A10
A13
A15
WE
D5
A16
A7
A6
D4
D3
D1
D7
D6
D2
A4
A1 A2
D0
N.C. VSS
VCC
N.C.
CE
N.C.
N.C.
N.C.
• I/O Configuration x8/x16 selectable by LB and UB pin
24mA
55mA
70ns 70ns
POWER DISSIPATION
55ns: 3.0~5.5V
70ns: 2.7~5.5V
• Easy expansion with CE and OE options
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VCC
GND
DQ4
DQ5
DQ6
DQ7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
GND
VCC
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
BS616LV2016EC
BS616LV2016EI
• Data retention supply voltage as low as 1.5V
• Fully static operation
Vcc=5.0V
Vcc=5.0V
10uA
30uA