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BS616LV161

器件描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit
器件厂商:BSI [Brilliance Semiconductor]
文件大小:254.97KB,共8页
Sponsor by e络盟
器件资料摘要:
Revision 1.1
Jan. 2004
1
R0201-BS616LV1613
Very Low Power/Voltage CMOS SRAM
1M X 16 bit (Dual CE Pins)
The BS616LV1613 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 16 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 3.0uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV1613 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1613 is available in 48-pin BGA package.
„ DESCRIPTION„ FEATURES
„ BLOCK DIAGRAM
„ PRODUCT FAMILY
„ PIN CONFIGURATIONS
Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice.
BS616LV1613
LB OE A0 A1 A2 CE2
D8 UB A3 A4 CE1 D0
D9
D10
A5 A6 D1 D2
VSS D11 A17 A7 D3 VCC
VCC D12
A16 D4
VSS
D14 D13 A14 A15 D5 D6
D15 A19. A12 A13 WE D7
A8 A8 A9 A10 A11 NC1
A
B
C
D
E
F
G
H
123456
NC
• Vcc operation voltage : 2.7~3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 45mA (@55ns) operating current
I -grade: 46mA (@55ns) operating current
C-grade: 36mA (@70ns) operating current
I -grade: 37mA (@70ns) operating current
3.0uA (Typ.) CMOS standby current
• High speed access time :
-55 55ns
-70 70ns
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)PRODUCT FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=3V
PKG TYPE
BS616LV1613FC +0
O
C to +70
O
C 2.7V ~ 3.6V 55 / 70 10 uA 45mA 36mA BGA-48-0912
BS616LV1613FI -40
O
C to +85
O
C 2.7V ~ 3.6V 55 / 70 20 uA 46mA 37mA BGA-48-0912
Row
Decoder
Memory Array
2048 x 8192
Column I/O
Write Driver
Sense Amp
Column Decoder
Data
Buffer
Output
A9 A8 A7
Data
Buffer
Input
Control
Vss
Vcc
OE
WE
CE1
D15
D0
A0
A13
A14
A15
A1
A2
16
16
16
16
18
512
8192
204822
A17
A16
A10
A12
A6A11
A3
Address
Input
Buffer
A5
Address Input Buffer
.
.
.
.
UB
.
.
.
.
LB
A4
A18
CE2
48-Ball CSP top View
BSI
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin
55ns : 3.0~3.6V
70ns : 2.7~3.6V
Vcc=3V Vcc=3V
55ns 70ns
A19