BS616LV161
器件描述:Very Low Power/Voltage CMOS SRAM 1M X 16 bit
文件大小:254.97KB,共8页
Sponsor by e络盟
器件资料摘要:
Revision 1.1
Jan. 2004
1
R0201-BS616LV1613
Very Low Power/Voltage CMOS SRAM
1M X 16 bit (Dual CE Pins)
The BS616LV1613 is a high performance, very low power CMOS Static
Random Access Memory organized as 1,048,576 words by 16 bits and
operates from a range of 2.7V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 3.0uA at 3.0V/25
o
C and maximum access time of 55ns at 3.0V/85
o
C.
Easy memory expansion is provided by an active LOW chip enable(CE1)
, active HIGH chip enable (CE2), active LOW output enable(OE) and
three-state output drivers.
The BS616LV1613 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV1613 is available in 48-pin BGA package.