A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25
O
C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
I
CBO
V
CB
= 8.0 V 200 Na
I
EBO
V
EB
= 1.0 V 1.0 µA
h
FE
V
CE
= 8.0 V I
C
= 10 mA 30 150 300 ---
C
CB
V
CB
= 8.0 V f = 1.0 MHz 0.2 pF
f
t
V
CE
= 8.0 V I
C
= 25 mA f = 1.0 GHz 8.0 GHz
S
21E

2

V
CE
= 8.0 V I
C
= 25 mA f = 2.0 GHz
f = 4.0 GHz
12.0
6.5

dB
P
1dB

V
CE
= 8.0 V I
C
= 25 mA f = 2.0 GHz
f = 4.0 GHz
19.0
18.5

dBm
G
1dB

V
CE
= 8.0 V I
C
= 25 mA f = 2.0 GHz
f = 4.0 GHz
15.0
10.5

dB
NF
O

V
CE
= 8.0 V I
C
= 10 mA f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
1.3
1.6
3.0

1.9 dB

NPN SILICON BIPOLAR TRANSISTOR
AT41470
DESCRIPTION:
The ASI AT41470 is a Common
Emitter Device Designed for low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.

MAXIMUM RATINGS
I
C
60 mA
V
CEO
12 V
V
CBO
20 V
V
EBO
1.5 V
P
DISS
500 mW @ T
C
= 25°C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
PACKAGE STYLE
















1 = BASE 2 & 4 = EMITTER
3 = COLLECTOR