N-Channel Field Effect Transistor

60N035
Advance Information















Ordering Information
Device Package Temp.
60N035T TO-220 0 to 150°C
60N035S TO-263 ( D
2
) 0 to 150°C

Absolute Maximum Rating
Symbol Parameter Max Unit
Drain Current
Continues

60
I
D
Pulsed 180
A
V
DSS
Drain-Source Voltage 30 V
V
GSV
Gate Source Voltage
Total Power Dissipation @ T
C
=25°C PD
Derate above 25°C
T
J
Operating and Storage
T
STG
Temperature Range

Description

The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.

The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
• Critical DC Electrical parameters
specified at elevated Temp.
• Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
• Super high density cell design for
extremely low R
DS(ON)


V
DSS
= 30V
R
DS (ON)
= 0.015 Ω
I
D
= 60A
Bay Linear
Linear Excellence

Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Te

±20 V
50 W
0.4
W/°C
-65 to 175
°C
l: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com