FEATURES
C0068 TrenchFETC0114 Power MOSFET
C0068 100% R
g
Tested
C0068 UIS Tested
APPLICATIONS
C0068 CCFL Inverter
Si4565DY
Vishay Siliconix
New Product
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
www.vishay.com
1
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(C0087) I
D
(A) Q
g
(Typ)
N-Channel 40
0.040 @ V
GS
= 10 V 5.2
8Channel 40
0.045 @ V
GS
= 4.5 V 4.9
P Channel 40
0.054 @ V
GS
= −10 V −4.5
9P-Channel −
0.072 @ V
GS
= −4.5 V −3.9
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
S
2
G
2
D
2
P-Channel MOSFET
N-Channel MOSFET
G
1
D
1
S
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C0095C UNLESS OTHERWISE NOTED)
N-Channel P-Channel
Parameter Symbol
10 secs Steady State 10 secs Steady State
Unit
Drain-Source Voltage V
DS
40 −40
V
Gate-Source Voltage V
GS
C003412 C003416
Continuous Drain Current (T
J
= 150C0095C)
a
T
A
= 25C0095C
I
D
5.2 3.9 −4.5 −3.3
T
A
= 70C0095C 4.2 3.1 −3.6 −2.7
Pulsed Drain Current I
DM
30
A
Continuous Source Current (Diode Conduction)
a
I
S
1.7 0.9 −1.7 −0.9
Avalanche Current
L = 0 1 mH
I
AS
13 16
Single Pulse Avalanche Energy
L = 0.1 mH
E
AS
8.5 13 mJ
Maximum Power Dissipatio
a
T
A
= 25C0095C
P
D
2.0 1.1 2 1.1
W
T
A
= 70C0095C 1.3 0.7 1.3 0.7
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 150 C0095C
THERMAL RESISTANCE RATINGS
N-Channel P-Channel
Parameter Symbol
Typ Max Typ Max
Unit
Maximum Junction to Ambient
a
t C0118 10 sec
R
52 62.5 50 62.5
Maximum Junction-to-Ambient
Steady State
thJA
90 110 85 110
C0095C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
32 40 30 40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.