©2002 Fairchild Semiconductor Corporation Rev. A, September 2002
BF199
Absolute Maximum Ratings* T
C
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics T
A
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 25 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 1.0mA, I
B
= 0 25 V
V
(BR)CBO
Collector-Base BreakdownVoltage I
C
= 100µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 4.0 V
I
CES
Collector Cut-off Current V
CE
= 30V, I
E
= 0 50 nA
On Characteristics
h
FE
DC Current Gain I
C
= 7.0mA, V
CE
= 10V 38
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 5.0mA 0.2 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 10mA, I
B
= 5.0mA 0.92 V
V
BE
(on) Base-Emitter On Voltage I
C
= 7.0mA, V
CE
= 10V 0.925 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product I
C
= 7.0mA, V
CE
= 10V,
f = 100MHz
1100 MHz
C
re
Common-Emitter Ruerse
Transfer Capacitance
V
CB
= 10V, I
E
= 0, f = 1.0MHz 0.4 pF
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
BF199
NPN RF Transistor
TO-92
1. Collector 2. Emitter 3. Base
1