Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 750 mA
I
DM
T
C
= 25°C, pulse width limited by T
JM
3A
I
AR
1.0 A
E
AR
T
C
= 25°C5J
E
AS
T
C
= 25°C 100 mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 3 V/ns
T
J
≤ 150°C, R
G
= 47 Ω
P
D
T
C
= 25°C40W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-252 0.8 g
TO-263 3 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
High Voltage MOSFET
G = Gate, D = Drain,
S = Source, TAB = Drain
D (TAB)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 250 µA 800 V
V
GS(th)
V
DS
= V
GS
, I
D
= 25 µA 2.5 4.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C25µA
V
GS
= 0 V T
J
= 125°C 500 µA
R
DS(on)
V
GS
= 10 V, I
D
= 500 mA 9.5 11 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Features
!International standard packages
!High voltage, Low R
DS (on)
HDMOS
TM
process
!Rugged polysilicon gate cell structure
!Fast switching times
Applications
! Switch-mode and resonant-mode
power supplies
! Flyback inverters
! DC choppers
! High frequency matching
Advantages
! Space savings
! High power density
DS98822C(11/03)
G
D
S
TO-220AB (IXTP)
© 2003 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 1N80
IXTP 1N80
IXTY 1N80
V
DSS
= 800 V
I
D25
= 750 mA
R
DS(on)
= 11 Ω
Preliminary Data
TO-252 AA (IXTY)
G
S
D (TAB)