2SB1705
Transistors
Rev.B 1/2
Low frequency amplifier
2SB1705


zApplication
Low frequency amplifier
Driver


zFeatures
1) A collector current is large.
2) VCE(sat) ≤ −250mV
At IC=−1.5A / IB=−30mA






zExternal dimensions (Unit : mm)
Each lead has same dimensions
ROHM : TSMT3
2SB1705
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol: XW
0.7
0.16
0~0.1
0.3
1.0MAX
(1) (2)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
0.85
~0.6

zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−15
−12
−6
−3
500
150
−55 to +150
−6
∗1
Unit
V
V
V
A
A
mW
°C
°C
∗2
Each Termminal Mounted on a Recommended
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW=1ms



zEquivalent circuit
(3)
(2)(1)




zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
VCB= −10V, IE=0A, f=1MHz
fT − 280 − MHz VCE= −2V, IE=500mA, f=100MHz
BVCBO −15 −−V IC= −10µA
BVCEO −12 −−V IC= −1mA
BVEBO −6 −−V IE= −10µA
ICBO −−−100 nA VCB= −15V
IEBO −−−100 nA VEB= −6V
VCE(sat) −−120 −250 mV IC= −1.5A, IB= −30mA
hFE 270 − 680 − VCE= −2V, IC= −500mA
Cob − 30 − pF
∗
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed