2SB1184 / 2SB1243
Transistors
1/3
Power Transistor (−60V, −3A)
2SB1184 / 2SB1243


!Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC/IB = -2A / -0.2A)
2) Complements the 2SD1760 / 2SD1864.



!Structure
Epitaxial planar type
PNP silicon transistor



!External dimensions (Units : mm)
2SB1184 2SB1243
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
−0.1
+0.2
−0.1
+0.2

+
0.3

−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.



!Absolute maximum ratings (Ta=25°C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
−60 V
V
V
A (DC)
°C
°C
−50
−5
−3
ICP A (Pulse)−4.5 ∗1
1
15
1
2SB1184
2SB1243
W
W (TC=25°C)
W
∗2
150
−55~+150
Symbol Limits Unit
∗1 Single pulse, Pw=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature













Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
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