2N7000BU/2N7000TA
BV
DSS
= 60 V
R
DS(on)
= 5.0 Ω
I
D
= 200 mA
60
200
110
1000
±30
400
3.2
- 55 to +150
300
312.5--
n Fast Switching Times
n Improved Inductive Ruggedness
n Lower Input Capacitance
n Extended Safe Operating Area
n Improved High Temperature Reliability
Advanced Small Signal MOSFET
Thermal Resistance
Junction-to-AmbientR
θJA
℃/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25℃)
Continuous Drain Current (T
C
=100℃)
Drain Current-Pulsed ①
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8? from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
I
D
P
D
T
J
, T
STG
T
L
mA
V
mW
mW/℃
mA
V
DSS
V
TO-92
1.Source 2. Gate 3. Drain
℃
Rev. B