A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
BR
I
R
= 10 µA 150 V
C
T
V
R
= 100 V f = 1.0 MHz 0.3 pF
R
S
I
F
= 100 mA f = 100 MHz 1.25 Ω
τ I
F
= 50 mA I
R
= 250 mA 100 µS
t
rr
V
R
= 10 V f = 20 mA 100 µS
SILICON PIN DIODE
1N5719
DESCRIPTION:
The1N5719 is a Silicon PIN Diode
Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
I
F
100 mA
V
R
150 V
P
DISS
250 mW @ T
A
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +200
O
C
θ
JC
0.7
O
C/mW
PACKAGE STYLE 01