© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 1000 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 1000 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C6A
I
DM
T
C
= 25°C, pulse width limited by T
JM
24 A
I
AR
T
C
= 25°
E
AR
T
C
= 25°C20mJ
E
AS
T
C
= 25°C 500 mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
15 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque TO-247 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 500uA 1000 V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA 3.0 5.5 V
I
GSS
V
GS
= ±20 V, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
50 µA
V
GS
= 0 V T
J
= 125°C1 m
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
1.9 Ω
Note 1
98732B (9/02)
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,

Low Intrinsic R
g
High dV/dt, Low t
rr
Features
●
RF capable MOSFETs
●
Double metal process for low gate
resistance
●
Rugged polysilicon gate cell structure
●
Unclamped Inductive Switching (UIS)
rated
●
Low package inductance
- easy to drive and to protect
●
Fast intrinsic rectifier
Applications
●
DC-DC converters
●
Switched-mode and resonant-mode
power supplies, >500kHz switching
●
DC choppers
●
13.5 MHz industrial applications
●
Pulse generation
●
Laser drivers
●
RF amplifiers
Advantages
●
Space savings
●
High power density
TO-247 AD (IXFH)
(TAB)
G = Gate, D = Drain,
S = Source, TAB = Drain
TO-268 (IXFT) Case Style
(TAB)
G
S
IXFH 6N100F
IXFT 6N100F
V
DSS
= 1000 V
I
D25
= 6 A
R
DS(on)
= 1.9 Ω
t
rr
≤ 250 ns