Document Number 3696
Issue 1
2N5010
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Parameter Test Conditions Min. Typ. Max. Unit
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SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
V
CBO
Collector – Base Voltage
V
CER
Collector – Emitter Voltage R = 10Ω
V
EBO
Emitter – Base Reverse Voltage
I
C
Continuous Collector Current
P
TOT
Total Device Dissipation T
C
= 25°C
T
J,
T
STG
Maximum Storage and Junction Temperature Range
R
θJC
Thermal Impedance Junction To Case
500V
500V
5V
0.5A
2W
200°C
50°C/W
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 (TO-205AD) PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise stated)
I
CBO
Collector Base Leakage Current
h
FE
D.C Current Gain
f
t
Transition Frequency
V
CB
= 500V
V
CE
= 10V I
C
=0.025A
0.006
30 180
20
mA
—
MHz