BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPES
n HIGH VOLTAGE CAPABILITY
n U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
n JEDEC TO-3 METAL CASE
n NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
APPLICATIONS:
n HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured using Multiepitaxial Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
June 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1500 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 700 V
V
EBO
Emitter-Base Voltage (I
C
=0) 10 V
IC Collector Current 8 A
ICM Collector Peak Current (tp <5ms) 15 A
TO - 3 TO - 218 ISOWATT218
P
tot
Total Dissipation at T
c
=25
o
C 150 125 50 W
T
stg
Storage Temperature -65 to 150 -65 to 150 -65 to 150
o
C
Tj Max. Operating Junction Temperature 150 150 150
o
C
1
2
3
TO-218 ISOWATT218
1
2
3
1
2
TO-3
1/8