BF961
Document Number 85002
Rev. 1.5, 25-Nov-04
Vishay Semiconductors
www.vishay.com
1
13625
1
4
3
2
G
2
G
1
D
S
Electrostatic sensitive device.
Observe precautions for handling.
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Features
• Integrated gate protection diodes
High cross modulation performance
Low noise figure
High AGC-range
Low feedback capacitance
Low input capacitance
Applications
Input- and mixer stages especially for FM- and VHF
TV-tuners up to 300 MHz.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 124 mg
Marking: BF961
Pinning:
1 = Drain, 2 = Source,
3 = Gate 1, 4 = Gate 2
Parts Table
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Maximum Thermal Resistance
1)
on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35 µm Cu
Part Ordering Ccode Marking Package
BF961 BF961A or BF961B BF961 TO50
BF961A BF961A BF961 TO50
BF961B BF961B BF961 TO50
Parameter Test condition Symbol Value Unit
Drain - source voltage V
DS
20 V
Drain current I
D
30 mA
Gate 1/Gate 2 - source peak
current
± I
G1/G2SM
10 mA
Total power dissipation T
amb
≤ 60 °C P
tot
200 mW
Channel temperature T
Ch
150 °C
Storage temperature range T
stg
- 55 to + 150 °C
Parameter Test condition Symbol Value Unit
Channel ambient
1)
R
thChA
450 K/W