2SC5624
器件描述：Silicon NPN Epitaxial High Frequency Low Noise Amplifier
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：105.63KB，共8页
Sponsor by e络盟器件资料摘要：
Rev.2.00, Oct.21.2003, page 1 of 7
2SC5624
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
REJ03G0129-0200Z
(Previous ADE-208-978(Z))
Rev.2.00
Oct.21.2003
Features
• High gain bandwidth product
f
T
= 28 GHz typ.
• High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
Note: Marking is “VH”-.
2SC5624
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier
REJ03G0129-0200Z
(Previous ADE-208-978(Z))
Rev.2.00
Oct.21.2003
Features
• High gain bandwidth product
f
T
= 28 GHz typ.
• High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz
Outline
CMPAK-4
1. Emitter
2. Collector
3. Emitter
4. Base
1
4
3
2
Note: Marking is “VH”-.