TO-126C Plastic-Encapsulated Transistors


2SB649/2SB649A TRANSISTOR (PNP)

FEATURES
Power dissipation
P
CM
: 1 W (Tamb=25℃)
Collector current
I
CM
: -1.5 A
Collector-base voltage
V
(BR)CBO
: -180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-1mA, I
E
=0 -180 V
Collector-emitter breakdown voltage V(BR)CEO
Ic=-10mA, I
B
=0 2SB649
2SB649A
-120
-160
V
Emitter-base breakdown voltage V(BR)EBO I
E
=-1mA, I
C
=0 -5 V
Collector cut-off current ICBO V
CB
=-160V, I
E
=0 -10 µA
Emitter cut-off current IEBO V
EB
=-4V, I
C
=0 -10 µA
h
FE(1)

V
CE
=-5V, I
C
=-150mA 2SB649
2SB649A
60
60

320
200

DC current gain
h
FE(2)
V
CE
=-5V, I
C
=-500mA 30
Collector-emitter saturation voltage VCE(sat) I
C
=-500mA, I
B
=-50mA -1 V
Base-emitter voltage VBE V
CE
=-5V, I
C
=-150mA -1.5 V
Transition frequency f
T
V
CE
=-5V, I
C
=-150mA 140 MHz
Collector output capacitance Cob V
CB
=-10V, I
E
=0, f=1MHz 27 pF

CLASSIFICATION OF h
FE(1)

Rank B C D
Range 60-120 100-200 160-320
Marking





1 2 3
TO-126C




1. EMITTER

2. COLLECTOR

3. BASE
Transys
Electronics
LIM ITED