TO-92 Plastic-Encapsulated Transistors


2N5551 TRANSISTOR (NPN)
FEATURES

Power dissipation
P
CM
: 0.625 W (Tamb=25℃)
Collector current
I
CM
: 0.6 A
Collector-base voltage
V
(BR)CBO
: 180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V
(BR)CBO

Ic= 100 µA, I
E
=0
180 V
Collector-emitter breakdown
voltage
V
(BR)CEO

Ic= 100 µA, I
B
=0
160 V
Emitter-base breakdown voltage V
(BR)EBO

I
E
= 100 µA, I
C
=0
6 V
Collector cut-off current I
CBO
V
CB
= 180 V, I
E
=0 0.1
µA
Emitter cut-off current I
EBO
V
EB
= 4 V, I
C
=0 0.1
µA
h
FE(1)
V
CE
= 5 V, I
C
= 1 mA 80
h
FE(2)
V
CE
= 5 V, I
C
= 10 mA 80 250 DC current gain
h
FE(3)
V
CE
= 5 V, I
C
= 50 mA 50
Collector-emitter saturation voltage V
CEsat
I
C
= 50 mA, I
B
= 5 mA 0.5 V
Base-emitter saturation voltage V
BEsat
I
C
= 50 mA, I
B
= 5 mA 1 V
Transition frequency f
T
V
CE
= 5 V,I
C
= 10 mA, f =30MHz 80 MHz
CLASSIFICATION OF h
FE(2)

Rank A B C
Range 80-160 120-180 150-250


1 2 3

TO-92




1. EMITTER

2. BASE

3. COLLECTOR

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