1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0065C0109C0112C0108C0105C0102C0105C0101C0114 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114C0115
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N5550 2N5551 Unit
Collector–Emitter Voltage V
CEO
140 160 Vdc
Collector–Base Voltage V
CBO
160 180 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
600 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
C0113JA
200 °C/W
Thermal Resistance, Junction to Case R
C0113JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0) 2N5550
2N5551
V
(BR)CEO
140
160
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 µAdc, I
E
= 0 ) 2N5550
2N5551
V
(BR)CBO
160
180
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 µAdc, I
C
= 0)
V
(BR)EBO
6.0 — Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0) 2N5550
(V
CB
= 120 Vdc, I
E
= 0) 2N5551
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C) 2N5550
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C) 2N5551
I
CBO
—
—
—
—
100
50
100
50
nAdc
µAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
— 50 nAdc
1. Pulse Test: Pulse Width = 300 C0109s, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5550/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
C0050C0078C0053C0053C0053C0048
C0050C0078C0053C0053C0053C0049
*Motorola Preferred Device
C0042
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER