1
Silicon MOS FETs (Small Signal)
unit: mm
2SK601
Silicon N-Channel MOS FET
For switching
n Features
l Low ON-resistance R
DS(on)
l High-speed switching
l Allowing to be driven directly by CMOS and TTL
l Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
*
T
ch
T
stg
Ratings
80
20
±0.5
±1
1
150
- 55 to +150
Unit
V
V
A
A
W
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*
1
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
2
t
off
*
2
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100m A, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
*
1
Pulse measurement
*
2
t
on
, t
off
measurement circuit
min
80
1.5
typ
2
300
45
30
8
15
20
Unit
m A
m A
V
V
W
mS
pF
pF
pF
ns
ns
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
Marking Symbol: O
max
10
0.1
3.5
4
*
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
4.5±0.1
2.6±0.1
2.5±0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0±0.15
1.5±0.1
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
1.6±0.2
45˚
marking
321
V
in
= 10V
t = 1m S
f = 1MHZ
50W
68W
t
on
t
off
V
in
10%
90%
10%
90%
V
out
V
in
V
out
V
DD
= 30V
V
out