EEWorld首页 新闻 论坛 博客 白皮书 专题 电子电路 电子器件 单片机 嵌入式 模拟电路 DSP FPGA 电源管理 手机/便携 医疗电子 汽车电子 工业控制
厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2SC5053

器件描述:Medium power transistor (50V, 1A)
器件厂商:ROHM [Rohm]
厂商主页:http://www.rohm.com/
文件大小:64.81KB,共3页
Sponsor by e络盟
器件资料摘要:
2SC5053
Transistors
Rev.A 1/2
Medium power transistor (50V, 1A)
2SC5053


zFeatures
1) Low saturation voltage, typically V
CE(sat)
= 0.12V at I
C
/
I
B
= 500mA / 50mA
2) P
C
=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SA1900






zExternal dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.40.4
1.51.5
(3)(2)(1)
4.5
0.5
4.0
2.5
1.0

z Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector power dissipation
Collector current
Collector power dissipation
Storage temperature
Symbol Limits
−60
−50
−5
−1
0.5
2
150
−55 to +150
Unit
V
V
V
A
−2 A (Pulse)
W
W
∗1
∗2
°C
°C
∗1 Single pulse Pw=100ms, Duty=1/2
∗2 When mounted on a 40 40 0.7mm seramic board.
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
+ +



zExternal dimensions (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance Cob
−60
−50
−5



120









150
20



−0.1
−0.5
−0.4
270


V
V
V
µA
µA
V

MHz
pF
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −40V
VEB = −4V
IC/IB = −500mA/−50mA
VCE/IC = −3V/−0.5A
VCE = −5V , IE = 50mA , f=100MHz
VCB = −10V , IE = 0A , f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
fT
VCE(sat)



zPackaging specifications and hFE
Type
Package
h
FE
Code
Basic ordering unit (pleces)
2SC5053
MPT3
QR
T100
Marking CG
1000
∗ Denotes hFE