1
Transistor
2SB956
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1280
n
Features
l Large collector power dissipation P
C
.
l Low collector to emitter saturation voltage V
CE(sat)
.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–20
–20
–5
–2
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –500mA
*2
V
CE
= –2V, I
C
= –1.5A
*2
I
C
= –1A, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –6V, I
E
= 0, f = 1MHz
min
–20
–5
130
50
typ
200
40
max
–1
280
– 0.5
–1.2
Unit
m A
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank R S
h
FE1
130 ~ 210 180 ~ 280
Marking Symbol HR HS
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol : H
*2
Pulse measurement