2SA0683
器件描述：Silicon PNP epitaxial planar type
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：99.15KB，共4页
Sponsor by e络盟器件资料摘要：
Transistors
1
Publication date: February 2004 SJC00001CED
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage
2SA0683 V
CBO
−30 V
(Emitter open)
2SA0684 −60
Collector-emitter voltage
2SA0683 V
CEO
−25 V
(Base open)
2SA0684 −50
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1A
Peak collector current I
CP
−1.5 A
Collector power dissipation P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
2SA0683 V
CBO
I
C
= −10 µA, I
E
= 0 −30 V
(Emitter open)
2SA0684 −60
Collector-emitter voltage
2SA0683 V
CEO
I
C
= −2 mA, I
B
= 0 −25 V
(Base open)
2SA0684 −50
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −10 V, I
C
= −500 mA 85 340
h
FE2
V
CE
= −5 V, I
C
= −1 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.85 −1.20 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
1
Publication date: February 2004 SJC00001CED
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
5.9±0.2
0.7±0.1
4.9±0.2
8.6
±
0.2
0.7
+0.3 –0.2
13.5
±
0.5
2.54±0.15
(3.2)
(1.27)(1.27)
0.45
+0.2
–0.1
0.45
+0.2
–0.1
132
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Rank Q R S
h
FE
85 to 170 120 to 240 170 to 340
Parameter Symbol Rating Unit
Collector-base voltage
2SA0683 V
CBO
−30 V
(Emitter open)
2SA0684 −60
Collector-emitter voltage
2SA0683 V
CEO
−25 V
(Base open)
2SA0684 −50
Emitter-base voltage (Collector open) V
EBO
−5V
Collector current I
C
−1A
Peak collector current I
CP
−1.5 A
Collector power dissipation P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage
2SA0683 V
CBO
I
C
= −10 µA, I
E
= 0 −30 V
(Emitter open)
2SA0684 −60
Collector-emitter voltage
2SA0683 V
CEO
I
C
= −2 mA, I
B
= 0 −25 V
(Base open)
2SA0684 −50
Emitter-base voltage (Collector open) V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Forward current transfer ratio
*
1
h
FE1
*
2
V
CE
= −10 V, I
C
= −500 mA 85 340
h
FE2
V
CE
= −5 V, I
C
= −1 A 50
Collector-emitter saturation voltage V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.85 −1.20 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.