2N6661
器件描述:
文件大小:KB,共页
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器件资料摘要:
Vishay Siliconix
2N6661/VN88AFD
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
www.vishay.com
11-1
N-Channel 80-V and 90-V (D-S) MOSFETS
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
(BR)DSS
Min (V) r
DS(on)
Max (C0087) V
GS(th)
(V) I
D
(A)
2N6661 90 4 @ V
GS
= 10 V 0.8 to 2 0.9
VN88AFD 80 4 @ V
GS
= 10 V 0.8 to 2.5 1.29
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 Low On-Resistance: 3.6 C0087
C0068 Low Threshold: 1.6 V
C0068 Low Input Capacitance: 35 pF
C0068 Fast Switching Speed: 6 ns
C0068 Low Input and Output Leakage
C0068 Low Offset Voltage
C0068 Low-Voltage Operation
C0068 Easily Driven Without Buffer
C0068 High-Speed Circuits
C0068 Low Error Voltage
C0068 Direct Logic-Level Interface: TTL/CMOS
C0068 Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
C0068 Battery Operated Systems
C0068 Solid-State Relays
1
2 3
TO-205AD
(TO-39)
Top View
DG
S
TO-220SD
(Tab-Drain)
Front View
SGD
D
G
S
N-Channel MOSFET
2N6661
VN88AFD
Device Marking
Front View
VN88AFD
“S” xxyy
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Side View
2N6661
“S” fllxxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083C0032C0040C0084
C0065
C0032C0061C0032C0050C0053C0095C0067C0032C0085C0078C0076C0069C0083C0083C0032C0079C0084C0072C0069C0082C0087C0073C0083C0069C0032C0078C0079C0084C0069C0068C0041
Parameter Symbol 2N6661 VN88AFD Unit
Drain-Source Voltage V
DS
90 80
Gate-Source Voltage V
GS
C003420 C003430
V
C0095
T
C
= 25C0095C 0.9 1.29
Continuous Drain Current (T
J
= 150 C)
T
C
= 100C0095C
I
D
0.7 0.81
A
Pulsed Drain Current
a
I
DM
C00343 C00343
T
C
= 25C0095C 6.25 15
Power Dissipation
T
C
= 100C0095C
P
D
2.5 6
W
Thermal Resistance, Junction-to-Ambient
b
R
thJA
170
C0095
Thermal Resistance, Junction-to-Case R
thJC
8.3
C/W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C0095C
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.