TECHNICAL DATA

NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices Qualified Level
2N6383 2N6384 2N6385




JAN, JANTX
JANTXV


MAXIMUM RATINGS
Ratings Symbol 2N6383 2N6384 2N6385 Unit
Collector - Emitter Voltage
V
CEO

40 60 80 Vdc
Collector - Base Voltage
V
CBO

40 60 80 Vdc
Emitter - Base Voltage
V
EBO

5.0 Vdc
Base Current I
B
0.25 Adc
Collector Current
I
C

10 Adc
Total Power Dissipation @ T
A
= +25
0
C
(1)

@ T
C
= +25
0
C
(2)

P
T

6.0
100
W
W
Operating & Storage Temperature
T
o p ,
T
stg

- 55 to +175
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance Junction - to - Case
R
θJC

1.75
0
C/W
1) Derate linearly 34.2 mW/
0
C above T
A
> +25
0
C
2) Derate linearly 571 mW/
0
C above T
C
> +25
0
C







TO - 3* (TO - 204AA)

*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I
C
= 200 mAdc 2N6383
2N6384
2N6385


V
(BR) CEO


40
60
80


Vdc
Collector - Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BB
= 100 Ω 2N6383
2N6384
2N6385


V
(BR) CER


40
60
80


Vdc
Collector - Base Cutoff Current
V
CE
= 40 Vdc 2N6383
V
CE
= 60 Vdc 2N6384
V
CE
= 80 Vdc 2N6385


I
CBO


1.0
1.0
1.0


mAdc


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120101
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