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2N5772

器件描述:NPN Switching Transistor
器件厂商:FAIRCHILD [Fairchild Semiconductor]
文件大小:28.94KB,共4页
Sponsor by e络盟
器件资料摘要:
©2004 Fairchild Semiconductor Corporation Rev. B, October 2004
2N57
72
Absolute Maximum Ratings * T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 15 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continued 300 mA
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
BV
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 15 V
BV
(BR)CES
Collector-Emitter Breakdown Voltage I
C
= 100µA, V
BE
= 0 40 V
BV
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
E
= 0 40 V
BV
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 100µA, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 20V, I
E
= 0 0.5 µA
I
CES
Collector Cutoff Current V
CE
= 20V, V
BE
= 0
V
CE
= 20V, V
BE
= 0, T
a
= 65°C
0.5
3.0
µA
µA
I
EBO
Emitter Cutoff Current V
EB
= 5.0V, I
C
= 0 100 µA
On Characteristics *
h
FE
DC Current Gain V
CE
= 0.4V, I
C
= 30mA
V
CE
= 0.5V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
30
25
15
120
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 30mA, I
B
= 3.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 3.0mA
0.2
0.28
0.5
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 30mA, I
B
= 3.0mA
I
C
= 100mA, I
B
= 10mA
I
C
= 300mA, I
B
= 3.0mA
0.73 0.95
1.2
1.7
V
V
V
Small Signal Characteristics
C
cb
Collector-Base Capacitance V
CB
= 5.0V, I
E
= 0, f = 1MHz 5.0 pF
C
eb
Emitter-Base Capacitance V
CB
= 5.0V, I
C
= 0, f = 1MHz 8.0 pF
h
fe
Small-Signal Current Gain I
C
= 300mA, V
CE
= 10V, f = 100MHz 3.5
2N5772
TO-92
NPN Switching Transistor
• Sourced from process 22.
1. Emitter 2. Base 3. Collector
1