TECHNICAL DATA

NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
Devices Qualified Level Devices Qualified Level
2N5664 2N5665
JAN
JANTX
JANTXV
2N5666 2N5666S 2N5667 2N5667S




JAN
JANTX
JANTXV
JANS

MAXIMUM RATINGS

Ratings

Symbol
2N5664
2N5666, S
2N5665
2N5667, S

Unit
Collector - Emitter Voltage V CEO 200 300 Vdc
Collector - Base Voltage V CBO 250 400 Vdc
Emitter - Base Voltage V EBO 6.0 Vdc
Base Current I B 1.0 Adc
Collector Current I C 5.0 Adc
2N5664
2N5665
2N5666, S
2N5667, S

Total Power Dissipation @ T A = +25 0 C
@ T C = +100 0 C
P T 2.5 (1)
30 (3)
1.2 (2)
15 (4)
W
W
Operating & Storage Junction Temperature Range T J , T stg - 65 to +200 0 C
1) Derate linearly 14.3 mW/ 0 C for T A > +25 0 C
2) Derate linearly 6.9 mW/ 0 C for T A > +25 0 C
3) Derate linearly 300 mW/ 0 C for T C >+100 0 C
4) Derate linearly 150 mW/ 0 C for T C > +100 0 C


TO - 66* (TO - 213AA)
2N5664, 2N5665


TO - 5*
2N5666, 2N5667


TO - 39* (TO - 205AD)
2N5666S, 2N5667S
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
I C = 10 mAdc 2N5664, 2N5666, S
2N5665, 2N5667, S

V (BR) CER

250
400

V dc
Emitter - Base Breakdown Voltage
I E = 10 µAdc

V (BR) EBO

6.0

Vdc
Collector - Emitter Cutoff Current
V CE = 200 Vdc 2N5664, 2N5666, S
V CE = 300 Vdc 2N5665, 2N5667, S

I CES

0.2
0.2

µAdc

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120101
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