Data Sheet 1 05.99

SIPMOS

Small-Signal-Transistor
Features
• Dual N channel
• Enhancement mode
• Avalanche rated
• Logic Level
• dv/dt rated
Product Summary
Drain source voltage
V
DS
30 V
Drain-Source on-state resistance
R
DS(on)
0.05
Ω
Continuous drain current
I
D
5 A
Type Package Ordering Code
BSO 307 N SO 8 Q67000-S4012
Continuous drain current, one channel active
T
A
= 25 ˚C
I
D
5 A
Pulsed drain current, one channel active
T
A
= 25 ˚C
20
IDpulse
Avalanche energy, single pulse
I
D
= 5 A, V
DD
= 25 V, R
GS
= 25 Ω
mJ
E
AS
55
Avalanche current,periodic limited by T
jmax
I
AR
5 A
Avalanche energy, periodic limited by T
jmax
mJ
E
AR
0.2
Reverse diode dv/dt
I
S
= 5 A, V
DS
= 24 V, di/dt = 200 A/µs,
T
jmax
= 150 ˚C
dv/dt
6 kV/µs
Gate source voltage V
V
GS
±20
Power dissipation, one channel active
T
A
= 25 ˚C
P
tot
2 W
Operating temperature ˚C
T
j
-55...+150
Storage temperature
T
stg
-55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Maximum Ratings, at T
j
= 25 ˚C, unless otherwise specified
Parameter Symbol Value Unit
Preliminary Data
BSO 307N