2N5564/5565/5566
Vishay Siliconix
Document Number: 70254
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-1
Matched N-Channel JFET Pairs
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
G
Typ (pA) C0106V
GS1
– V
GS2
C0106 Max (mV)
2N5564 –0.5 to –3 –40 7.5 –3 5
2N5565 –0.5 to –3 –40 7.5 –3 10
2N5566 –0.5 to –3 –40 7.5 –3 20
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 Two-Chip Design
C0068 High Slew Rate
C0068 Low Offset/Drift Voltage
C0068 Low Gate Leakage: 3 pA
C0068 Low Noise: 12 nV⁄√Hz @ 10 Hz
C0068 Good CMRR: 76 dB
C0068 Minimum Parasitics
C0068 Tight Differential Match vs. Current
C0068 Improved Op Amp Speed, Settling Time
Accuracy
C0068 Minimum Input Error/Trimming Requirement
C0068 Insignificant Signal Loss/Error Voltage
C0068 High System Sensitivity
C0068 Minimum Error with Large Input Signals
C0068 Maximum High Frequency Performance
C0068 Wideband Differential Amps
C0068 High-Speed,
Temp-Compensated,
Single-Ended Input Amps
C0068 High-Speed Comparators
C0068 Impedance Converters
C0068 Matched Switches
C0068C0069C0083C0067C0082C0073C0080C0084C0073C0079C0078
The 2N5564/5565/5566 are matched pairs of JFETs mounted
in a TO-71 package. This two-chip design reduces parasitics
for good performance at high frequency while ensuring
extremely tight matching. This series features high
breakdown voltage (V
(BR)DSS
typically > 55 V), high gain
(typically > 9 mS), and <5 mV offset between the two die.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and
the low-leakage 2N5196/5197/5198/5199 data sheets.
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083
Gate-Drain, Gate-Source Voltage –40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Gate Voltage C003480 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300 C0095C. . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200C0095C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Side
a
325 mW. . . . . . . . . . . . . . . . . . . . . . . .
Total
b
650 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.6 mW/C0095C above 25C0095C
b. Derate 5.2 mW/C0095C above 25C0095C