4
C1
B2
E2
E1
B1
C2
pin #1
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 200 mA. Sourced from Process 07.
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 45 V
VCES Collector-Base Voltage 50 V
VCBO Collector-Base Voltage 50 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
2001 Fairchild Semiconductor Corporation Rev.A1
Absolute Maximum Ratings* T
A
= 25°C unless otherwise noted
Thermal Characteristics T
A
= 25°C unless otherwise noted
Symbol Characteristic Max Units
BC847S
PD Total Device Dissipation
Derate above 25°C
300
2.4
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 415 °C/W
BC847S
SC70-6
Mark: 1C
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
BC847S