PNP EPITAXIAL
BC556/557/558/559/ 560 SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
• HIGH VOLTAGE: BC556, V CEO = -65V
• LOW NOISE: BC559, BC560
• Complement to BC546 ... BC 550
ABSOLUTE MAXIMUM RATINGS (T A =25 °C )
ELECTRICAL CHARACTERISTICS (T A =25 °C )
h FE CLASSIFICATION
Characteristic Symbol Rating Unit
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
V CBO
V CEO
V EBO
I C
P C
T J
T STG
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
V
V
V
V
V
V
V
mA
mW
°C
°C
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Collector Base Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Noise Figure : BC556/557/558
: BC559/560
: BC559
: BC560
I CBO
h FE
V CE (sat)
V BE (on)
V BE (on)
f T
C CBO
NF
NF
V CB = -30V, I E =0
V CE = -5V, I C =2mA
I C = -10mA, I B = -0.5mA
I C = -100mA, I B = -5mA
I C = -10mA, I B = -0.5mA
I C = -100mA, I B = -5mA
V CE = -5V, I C = -2mA
V CE = -5V, I C = -10mA
V CE = -5V, I C = -10mA
V CB = -10V, f=1MHz
V CE = -5V, I C = -200 µA
f=1KHz, R G = 2K Ω
V CE = -5V, I C = -200 µA
R G =2 K Ω
f=30~15000MHz
110
-600
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
-15
800
-300
-650
-750
-800
6
10
4
4
2
nA
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
Classification A B C
h FE 110-220 200-450 420-800
TO-92
1. Collec tor 2. Base 3. Emitter
1999 Fairchild Semiconductor Corporation
Rev. B