2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-1
Monolithic N-Channel JFET Duals
C0080C0082C0079C0068C0085C0067C0084C0032C0083C0085C0077C0077C0065C0082C0089
Part Number V
GS(off)
(V) V
(BR)GSS
Min (V) g
fs
Min (mS) I
G
Max (pA) C0106V
GS1
– V
GS2
C0106 Max (mV)
2N5196 –0.7 to –4 –50 1 –15 5
2N5197 –0.7 to –4 –50 1 –15 5
2N5198 –0.7 to –4 –50 1 –15 10
2N5199 –0.7 to –4 –50 1 –15 15
C0070C0069C0065C0084C0085C0082C0069C0083 C0066C0069C0078C0069C0070C0073C0084C0083 C0065C0080C0080C0076C0073C0067C0065C0084C0073C0079C0078C0083
C0068 Monolithic Design
C0068 High Slew Rate
C0068 Low Offset/Drift Voltage
C0068 Low Gate Leakage: 5 pA
C0068 Low Noise
C0068 High CMRR: 100 dB
C0068 Tight Differential Match vs. Current
C0068 Improved Op Amp Speed, Settling Time
Accuracy
C0068 Minimum Input Error/Trimming Requirement
C0068 Insignificant Signal Loss/Error Voltage
C0068 High System Sensitivity
C0068 Minimum Error with Large Input Signal
C0068 Wideband Differential Amps
C0068 High-Speed, Temp-Compensated,
Single-Ended Input Amps
C0068 High Speed Comparators
C0068 Impedance Converters
C0068C0069C0083C0067C0082C0073C0080C0084C0073C0079C0078
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
G
guaranteed at V
DG
= 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
C0065C0066C0083C0079C0076C0085C0084C0069C0032C0077C0065C0088C0073C0077C0085C0077C0032C0082C0065C0084C0073C0078C0071C0083
Gate-Drain, Gate-Source Voltage –50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.) 300 C0095C. . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200C0095C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150C0095C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Side
a
250 mW. . . . . . . . . . . . . . . . . . . . . . . .
Total
b
500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2 mW/C0095C above 85C0095C
b. Derate 4 mW/C0095C above 85C0095C