1
4-Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
™

Flash Memory
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
AT49BV/LV040
Features
• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Chip Erase Cycle Time - 10 seconds
• Byte-by-Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
– 25 mA Active Current
–50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
– 8 x 8 mm CBGA
– 8 x 14 mm V-TSOP
Description
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech-
nology, the devices offer access times to 120 ns with power dissipation of just 90 mW
over the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled “boot block” protection feature. Two versions of
the feature are available: the AT49BV/LV040 locates the boot block at lowest order
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses
(“top boot”).
0679AX-A–9/97
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
CBGA Top View
A
B
C
D
E
F
1 234567
GND
A17
A10
A14
A16
A15
I/O6
I/O7
NC
A13
A11
A12
VCC
I/O4
I/O5
A9
WE
A8
VCC
NC
NC
NC
NC
NC
I/O2
NC
I/O3
NC
A7
A18
OE
I/O0
I/O1
A6
A4
A5
GND
CE
A0
A3
A1
A2
PLCC Top View
V - TSOP Top View (8 x 14 mm) or
T - TSOP Top View (8 x 20 mm)
(continued)