1
Features
• Fast Read Access Time - 150 ns
• Fast Byte Write - 200 µs or 1 ms
• Self-Timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
• Direct Microprocessor Control
–DATA POLLING
• Low Power
– 30 mA Active Current
–100 µA CMOS Standby Current
• High Reliability
– Endurance: 10
4
or 10
5
Cycles
– Data Retention: 10 Years
• 5V ± 10% Supply
• CMOS & TTL Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
16K (2K x 8)
Parallel
EEPROMs
AT28C16
Rev. 0540B–10/98
Pin Configurations
Pin Name Function
A0 - A10 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PDIP, SOIC
To p V i ew
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC
To p V i ew
Note: PLCC package pins 1 and 17
are DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2
GND
DC
I/O3 I/O4 I/O5
A7 NC NC DC VCC WE NC
(continued)