2003-06-23
Page 1
BSS 83 P
Rev. 1.0
SIPMOS

Small-Signal-Transistor
Features
c183 P-Channel
c183 Enhancement mode
c183 Avalanche rated
c183 Logic Level
c183 dv/dt rated
Product Summary
Drain source voltage VV
DS
-60
Drain-source on-state resistance R
DS(on)
2
c87
Continuous drain current AI
D
-0.33
1
2
3
VPS05161
Type Package Ordering Code
BSS 83 P SOT-23 Q67041-S1416
Marking
YAs
Pin 1 PIN 2 PIN 3
G S D
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter Symbol UnitValue

-0.33
-0.27
AContinuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A , V
DD
= -25 V, R
GS
= 25 c87
9.5 mJE
AS
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
dv/dt 6Reverse diode dv/dt
I
S
= -0.33 A, V
DS
= -48 V, di/dt = 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage V
GS
c17720
V
Power dissipation
T
A
= 25 °C
P
tot
0.36 W
Operating and storage temperature T
j
, T
stg
-55...+150 °C
IEC climatic category; DIN IEC 68-1 55/150/56