© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 500 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 500 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C13A
I
DM
T
C
= 25°C, pulse width limited by T
JM
78 A
I
AR
T
C
= 25°C26
E
AR
T
C
= 25°C40mJ
E
AS
T
C
= 25°C 1.0 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150°C, R
G
= 4 Ω
P
D
T
C
= 25°C 100 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
V
ISOL
50/60 Hz, RMS, t = 1, leads-to-tab 2500 V~
F
C
Mounting Force 11..65/2.5..15 N/lb
Weight 2g
G = Gate D = Drain
S = Source
DS99227(10/04)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 250 µA 500 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±30 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125°C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
260 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHV
TM
Power MOSFET
V
DSS
= 500 V
I
D25
=13 A
R
DS(on)
= 260 mΩ
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Avalanche Rated
ISOPLUS220
TM
(IXTC)
E153432
Advanced Technical Information
G
D
S
Isolated Tab
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
IXTC 26N50P