7MBP 50RA-120 IGBT IPM 1200V6x50A+Chopper
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( T c =25°C )
Items Symbols Ratings Units
Min. Max.
DC Bus Voltage V DC 0 900
DC Bus Voltage (surge) V DC(Surge) 0 1000
DC Bus Voltage (short o p erating) V SC 200 800
Collector-Emitter Voltage V CES 0 1200
Inverter Continuous I C 50
Collector 1ms I CP 100 A
Current Duty=62.6% -I C 50
Collector Power Dissipation One Transistor P C 400 W
Dynamic Brake Continuous I C 25
Collector Current 1ms I CP 50 A
Forward Current of Diode I F 25
Collector Power Dissi. DB One Transistor P C 198 W
Voltage of Power Supply for Driver V CC 0 20
Input Signal Voltage V IN 0 V Z
Input Signal Current I IN 1 mA
Alarm Signal Voltage V ALM 0 V CC V
Alarm Signal Current I ALM 15 mA
Junction Temperature T j 150
Operating Temperature T OP -20 100 °C
Storage Temperature T stg -40 125
Isolation Voltage A.C. 1min. V iso 2500 V
Mounting *1 3.5
Terminals *1 3.5
Note: *1: Recommendable Value; 2.5 ∼ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at T j =25°C, V CC =15V )
Items Symbols Conditions Min. Typ. Max. Units
Collector Current At Off Signal Input I CES V CE =1200V, Input Terminal Open 1.0 mA
INV Collector-Emitter Saturation Voltage V CE(Sat) I C =50A 2.6 V
Forward Voltage of FWD V F -I C =50A 3.0 V
Collector Current At Off Signal Input I CES V CE =1200V, Input Terminal Open 1.0 mA
DB Collector-Emitter Saturation Voltage V CE(Sat) I C =25A 2.6 V
Forward Voltage of FWD V F -I C =25A 3.3 V
• Electrical Characteristics of Control Circuit ( at T j =25°C, V CC =15V )
Items Symbols Conditions Min. Typ. Max. Units
Current of P-Line Side Driver (One Unit) I CCP f SW =0~15kHz, T C =-20~100°C 3 18
Current of N-Line Side Driver (Three Units) I CCN f SW =0~15kHz, T C =-20~100°C 10 65
On 1.00 1.35 1.70
Off 1.25 1.60 1.95 V
Input Zener Voltage V Z R IN =20k Ω 8.0
Over Heating Protection Temperature Level T COH V DC =0V, I C =0A, Case Temp. 110 125
Hysteresis T CH 20
IGBT Chips Over Heating Protec. Temp. Level T jOH Surface Of IGBT Chip 150
Hysteresis T jH 20
Inverter Collector Current Protection Level I OC T j =125°C 75
DB Collector Current Protection Level I OC T j =125°C 38
Over Current Detecting Time t DOC T j =25°C 10 µs
Alarm Signal Hold Time t ALM 1.5 2 ms
Limiting Resistor for Alarm R ALM 1425 1500 1575 Ω
Under Voltage Protection Level V UV 11.0 12.5
Hysteresis V H 0.2
• Dynamic Characteristics ( at T C =T j =125°C, V CC =15V )
Items Symbols Conditions Min. Typ. Max. Units
t ON I C =50A, V DC =600V 0.3
Switching Time t OFF 3.6 µs
t RR I F =50A, V DC =600V 0.4
n Outline Drawing
Screw Torque
V IN( th )Input Signal Threshold Voltage
V
V
Nm
mA
°C
A
V