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PRELIMINARY DATA
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M58CR032C
M58CR032D
32 Mbit (2Mb x 16, Dual Bank, Burst )
1.8V Supply Flash Memory
FEATURES SUMMARY
a73 SUPPLY VOLTAGE
–V
DD
= 1.65V to 2V for Program, Erase and
Read
–V
DDQ
= 1.65V to 3.3V for I/O Buffers
–V
PP
= 12V for fast Program (optional)
a73 SYNCHRONOUS / ASYNCHRONOUS READ
– Burst mode Read: 54MHz
– Page mode Read (4 Words Page)
– Random Access: 85, 100, 120 ns
a73 PROGRAMMING TIME
– 10µs by Word typical
– Double/Quadruple Word programming option
a73 MEMORY BLOCKS
– Dual Bank Memory Array: 8/24 Mbit
– Parameter Blocks (Top or Bottom location)
a73 DUAL OPERATIONS
– Read in one Bank while Program or Erase in
other
– No delay between Read and Write operations
a73 BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
a73 SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
a73 COMMON FLASH INTERFACE (CFI)
a73 100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Packages
a73 ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58CR032C: 88C8h
– Bottom Device Code, M58CR032D: 88C9h
FBGA
TFBGA56 (ZB)
6.5 x 10 mm