FEATURES
C0068 TrenchFETC0114 Power MOSFET
C0068 100% R
g
Tested
Si3454ADV
Vishay Siliconix
Document Number: 71108
S-40424—Rev. C, 15-Mar-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(C0087) I
D
(A)
30
0.060 @ V
GS
= 10 V 4.5
0.085 @ V
GS
= 4.5 V 3.8
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3454ADV-T1
Si3454ADV-T1—E3 (Lead Free)
Marking Code: A4xxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C0095C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
C003420
Continuous Drain Current (T
J
= 150C0095C)
a
T
A
= 25C0095C
I
D
4.5 3.4
T
A
= 70C0095C 3.6 2.7
A
Pulsed Drain Current (10 C0109s Pulse Width) I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.7 1.0
Maximum Power Dissipation
a
T
A
= 25C0095C
P
D
2.0 1.14
W
T
A
= 70C0095C 1.3 0.73
Operating Junction and Storage Temperature Range T
J
, T
stg
−55 to 150 C0095C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Mi J ti tAbit
a
t C0118 5 sec
R
50 62.5
Maximum Junction-to-Ambient
Steady State
thJA
90 110
C0095C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
30 36
Notes
a. Surface Mounted on 1” x 1” FR4 Board.